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Information card for entry 4003944
Preview
| Coordinates | 4003944.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | As6 Cd2 La3 |
|---|---|
| Calculated formula | As6 Cd2 La3 |
| Title of publication | Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6 |
| Authors of publication | Piva, Mario M.; Rahn, Marein C.; Thomas, Sean M.; Scott, Brian L.; Pagliuso, Pascoal G.; Thompson, Joe D.; Schoop, Leslie M.; Ronning, Filip; Rosa, Priscila F. S. |
| Journal of publication | Chemistry of Materials |
| Year of publication | 2021 |
| a | 21.732 ± 0.008 Å |
| b | 4.0928 ± 0.0015 Å |
| c | 12.323 ± 0.003 Å |
| α | 90 ± 0.03° |
| β | 100.92 ± 0.03° |
| γ | 90 ± 0.03° |
| Cell volume | 1076.2 ± 0.6 Å3 |
| Cell temperature | 293 K |
| Ambient diffraction temperature | 293 K |
| Number of distinct elements | 3 |
| Space group number | 12 |
| Hermann-Mauguin space group symbol | C 1 2/m 1 |
| Hall space group symbol | -C 2y |
| Residual factor for all reflections | 0.2586 |
| Residual factor for significantly intense reflections | 0.0851 |
| Weighted residual factors for significantly intense reflections | 0.0987 |
| Weighted residual factors for all reflections included in the refinement | 0.1031 |
| Goodness-of-fit parameter for significantly intense reflections | 4.24 |
| Goodness-of-fit parameter for all reflections included in the refinement | 2.3 |
| Diffraction radiation probe | x-ray |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 265316 (current) | 2021-05-19 | cif/ Adding structures of 4003944 via cif-deposit CGI script. |
4003944.cif |
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Users of the data should acknowledge the original authors of the
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