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Information card for entry 4003945
Preview
| Coordinates | 4003945.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | As6 Cd2 Ce3 |
|---|---|
| Calculated formula | As6 Cd2 Ce3 |
| Title of publication | Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6 |
| Authors of publication | Piva, Mario M.; Rahn, Marein C.; Thomas, Sean M.; Scott, Brian L.; Pagliuso, Pascoal G.; Thompson, Joe D.; Schoop, Leslie M.; Ronning, Filip; Rosa, Priscila F. S. |
| Journal of publication | Chemistry of Materials |
| Year of publication | 2021 |
| a | 21.621 ± 0.009 Å |
| b | 4.0634 ± 0.0014 Å |
| c | 12.224 ± 0.002 Å |
| α | 90 ± 0.02° |
| β | 100.84 ± 0.02° |
| γ | 90 ± 0.03° |
| Cell volume | 1054.8 ± 0.6 Å3 |
| Cell temperature | 293 K |
| Ambient diffraction temperature | 293 K |
| Number of distinct elements | 3 |
| Space group number | 12 |
| Hermann-Mauguin space group symbol | C 1 2/m 1 |
| Hall space group symbol | -C 2y |
| Residual factor for all reflections | 0.2601 |
| Residual factor for significantly intense reflections | 0.0671 |
| Weighted residual factors for significantly intense reflections | 0.0854 |
| Weighted residual factors for all reflections included in the refinement | 0.0885 |
| Goodness-of-fit parameter for significantly intense reflections | 3.61 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.7 |
| Diffraction radiation probe | x-ray |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 265317 (current) | 2021-05-19 | cif/ Adding structures of 4003945 via cif-deposit CGI script. |
4003945.cif |
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Users of the data should acknowledge the original authors of the
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